High Power RF LDMOS FET
90 W, 28 V, 920 – 960 MHz
- Input and output internal matching
- Typical CW performance, 960 MHz, 28 V, 90 W output power at P1dB, 65% efficiency
- Typical two-carrier WCDMA performance, 960 MHz, 28 V
- 20 W average output power
- 20.8 dB gain
- 35% Efficiency
- –35 dBc intermodulation distortion
- Integrated ESD protection
- Low thermal resistance
- Pb-free and RoHS-compliant
- Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power
- Package: H-36265-2, bolt-down
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