Thermally-Enhanced High Power RF LDMOS FET
150 W, 28 V, 2300 – 2400 MHz
- Asymmetrical Doherty design
- Main: P1dB = 60 W Typ
- Peak: P1dB = 90 W Typ
- Broadband internal input and output matching
- Typical pulsed CW performance, 2350 MHz, 28 V, Doherty configuration
- Output power at P1dB = 100 W
- Efficiency = 49%
- Gain = 17.5 dB
- Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
- Capable of handling 10:1 VSWR @28 V, 120 W (CW) output power
- Low thermal resistance
- Pb-free and RoHS compliant
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