High Power RF LDMOS FET, 25 W, 28 V, 2495 – 2690 MHz
- Broadband input matching
- Typical CW performance, 2620 MHz, 28 V
- Output power at P1dB = 25 W
- Efficiency = 57%
- Linear Gain = 19.4 dB
- Capable of handling 10:1 VSWR @28 V, 25 W (CW) output power
- Integrated ESD protection
- Low thermal resistance
- Pb-free and RoHS compliant
- Package: H-37248-4, earless
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