High Power RF LDMOS FET, 150 W, 30 V, 2110 – 2170 MHz
- Broadband internal matching
- Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% CCDF
- Average output power = 40 W
- Linear Gain = 18 dB
- Efficiency = 32%
- Adjacent channel power = –34 dBc
- Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 150 W
- Efficiency = 55%
- Integrated ESD protection: Human Body Model, Class 2 (minimum)
- Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power
- Pb-free and RoHS compliant
- Package: H-36248-2, bolt-down
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