High Power RF LDMOS FET, 80 W, 28 V, 2110 – 2170 MHz
- Asymmetrical design
- Main : P1dB = 19 W Typ
- Peak : P1dB = 60 W Typ
- Broadband internal matching
- Wide video bandwidth
- Typical CW pulsed performance, 2170 MHz, 28 V (Doherty fixture)
- Output power @ P3dB = 75 W
- Efficiency = 48%
- Gain = 14 dB
- Capable of handling 10:1 VSWR @28 V, 80 W (CW) output power
- Integrated ESD protection
- Low thermal resistance
- Pb-free and RoHS compliant
- Package: H-37248-4, earless
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