High Power RF LDMOS FET
340 W, 30 V, 1805 – 1880 MHz
- Broadband input and output matching
- Wide video bandwidth
- Typical single-carrier WCDMA performance at 1880 MHz, 30 V, 5.5 dB PAR @ 0.01% CCDR probability
- Output power = 125 W
- Efficiency = 31%
- Gain = 17 dB
- ACPR @ 5 MHz= –37 dBc
- Increased negative gate-source voltage range for improved performance in Doherty amplifiers
- Capable of handling 10:1 VSWR @ 30 V, 300 W (CW) output power
- Integrated ESD protection
- Excellent thermal stability
- Pb-free and RoHS-compliant
- Package: H-34275G-6/2, gull wing
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