BAT17-04W

概要

These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector applications at frequencies as high as 6 GHz.

特長

  • Low inductance Ls = 1.4 nH (typical)
  • Low capacitance C = 0.61 pF (typical) at frequency f = 1 MHz
  • Industry standard SOT323-3 package (2.1 mm x 2 mm x 0.9 mm)
  • Pb-free, RoHS compliant and halogen free

推奨アプリケーション例

For mixers and detectors in:

  • Wearables
  • Smart metering
  • Telematic systems
サポート