This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
• Low inductance Ls = 1.8 nH (typical)
• Low capacitance C = 0.28 pF (typical) at 1 MHz
• Industry standard SOD323 package (1.7 mm x 1.25 mm x 0.9 mm)
• Pb-free, RoHs compliant and halogen-free
For mixers and detectors in:
- Sensor interface in and secury systems
- Telematic systems
- Radar systems for industrial use
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