RFミキサ +Power ディテクタ用ショットキーダイオード
Infineon RF Schottky diodes are silicon low barrier N-type devices and, unlike other solutions available in the market, they come with various junction diode configurations which can be used for very sensitive power detector circuits, in sampling circuits or in mixer circuits.
The very low barrier height and very small forward voltage, along with low junction capacitance, make this series of devices excellent choice as detector functions at frequencies as high as 24 GHz.
All Infineon RF Schottky diodes come with an integrated guard ring on-chip for overvoltage protection.
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