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LDMOS Transistors and Amplifier ICs

New GaN RF Power Transistors for Cellular Infrastructure Applications

Building on our extensive cellular infrastructure experience and expertise, Infineon introduces a new family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors which enable cellular amplifier designers to build smaller, more powerful and more flexible transmitters.

Key Features:

  • 70W to 170W (P3dB)
  • 1800MHz to 2700MHz
  • High efficiency
  • Broadband capability

Please click here for more information on GaN transistor products


RF Power Transistors for Cellular Infrastructure
Infineon’s provides solutions that address key requirement of today’s cellular communication systems: wide signal bandwidth, DPD linearization, high efficiency and compact designs.

Key Features:

  • 28V and 50V process technology
  • Broadband designs
  • Wide video bandwidth
  • Compact Doherty designs
  • High performance package technology with copper head slugs

wireless antenna

Communications / High Power Pulsed Application
Our RF Power technology portfolio provides the most advanced solutions for today’s communication amplifiers and the most rugged and stable devices in pulsed applications.

Key Features:

  • 450MHz to 2700 MHz
  • Power levels from 4W to 1000W
  • High ruggedness
  • High RF consistency
  • Specialized solutions for RADAR, commercial avionics, broadcast and ISM applications




Visit us at:

IMS Seattle 2013, June 2 - 7, Booth 625
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