BTT6200-1ENA
The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is especially designed to drive lamps up to 1 x R10W 24 V or 1 x R5W 12 V, as well as LEDs in the harsh automotive environment.
特長
• Single channel device
• Very low stand-by current
• 3.3 V and 5 V compatible logic inputs
• Electrostatic discharge protection (ESD)
• Optimized electromagnetic compatibility
• Logic ground independent from load ground
• Very low power DMOS leakage current in OFF state
• Green product (RoHS compliant)
• AEC qualified
推奨アプリケーション例
• Suitable for resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits
• Most suitable for loads with high inrush current, such as lamps
• Suitable for 12 V and 24 V trucks and transportation system
