BTS5090-1EJA

概要

The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 technology. It is specially designed< to drive lamps up to 1 * P21W, as well as LEDs in the harsh automotive environment.

特長

  • One channel device
  • Very low stand-by current
  • 3.3 V and 5 V compatible logic inputs
  • Electrostatic discharge protection (ESD)
  • Optimized electromagnetic compatibility
  • Logic ground independent from load ground
  • Very low power DMOS leakage current in OFF state
  • Green product (RoHS compliant)
  • AEC qualified
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トレーニング
Introduction to the world of Infineon smart switches

インフィニオンのスマートスイッチの世界へ

  • スマートスイッチがモビリティの未来とどのように密接に関連しているかをご覧ください
  • インフィニオンのソリューションを知る
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