FF6MR12W2M1_B70

概要

EasyDUAL™ 2B 1200 V, 6 mΩ half-bridge module with CoolSiC™ MOSFET, NTC temperature sensor, PressFIT contact technology and aluminium nitride ceramic. 

特長

  • High performance aluminum nitride ceramic
  • 1200 V CoolSiC™ trench MOSFET technology
  • Best-in-class Easy module package
  • Half-bridge configuration
  • PressFIT Technology

利点

  • Better thermal conductivity of DCB material - RthJH improvement by 40% possible
  • Superior gate-oxide reliability of CoolSiC™ MOSFET
  • Power density and compact design
  • Minimization of cavity between module and heat sink
  • High degree of freedem for the inverter designer
  • Longer lifetime and less cooling effort

The changing face of CAV – how electrification is changing the commercial vehicles business

 

This whitepaper reviews the e-CAV market‘s applications and takes a look at the solutions Infineon has on offer meeting the extreme demands placed on the electronic systems.

> Download now

 

Webinar about driving the electrification of commercial vehicles

 

Join our webinar and learn about trends and semiconductor system solutions in the electrification of commercial vehicles.

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How to choose gate driver for SiC MOSFETs and SiC MOSFET modules

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

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