FF2MR12KM1P

概要

Half-bridge 1200 V CoolSiC™ MOSFET Module

62 mm 1200 V, 2 mΩ half-bridge module with CoolSiC™ MOSFET with pre-applied Thermal Interface Material.

特長

  • Superior gate oxide reliability
  • Highest robustness against humidity
  • Robust integrated body diode, and thus optimal thermal conditions
  • High cosmic ray robustness
  • High speed switching module with very low losses
  • Symmetrical module design and switching behavior of upper and lower switch
  • Standard construction technique of the module and therefore known reliable. Production in the 62mm high volume production line

利点

  • Minimizes cooling efforts due to very low switching losses
  • High switching frequency allows using less magnetic components. Therefore reduction in volume and size/dimension
  • Reduction of system costs, due to module benefits
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