FF2MR12KM1P
概要
Half-bridge 1200 V CoolSiC™ MOSFET Module
62 mm 1200 V, 2 mΩ half-bridge module with CoolSiC™ MOSFET with pre-applied Thermal Interface Material.
特長
- Superior gate oxide reliability
- Highest robustness against humidity
- Robust integrated body diode, and thus optimal thermal conditions
- High cosmic ray robustness
- High speed switching module with very low losses
- Symmetrical module design and switching behavior of upper and lower switch
- Standard construction technique of the module and therefore known reliable. Production in the 62mm high volume production line
利点
- Minimizes cooling efforts due to very low switching losses
- High switching frequency allows using less magnetic components. Therefore reduction in volume and size/dimension
- Reduction of system costs, due to module benefits
図
シミュレーション
サポート