DF4-19MR20W3M1HF_B11
2000 V/60 A Boost EasyPACK™ 3B CoolSiC™ MOSFET モジュール
PressFitピンおよびNTCを備えたEasyPACK™ 3B CoolSiC™ MOSFET 2000 V/60 A、Boostモジュール
特長
- 高さ12 mmの最高クラスのパッケージ
- 第1世代トレンチ技術から進化した2 kV CoolSiC™ MOSFET
- 推奨ゲート駆動電圧ウィンドウを+15 V~+18 Vおよび0 V~-5 Vに拡大
- ゲート-ソース間電圧の最大値を+23 V / -10 Vに拡大
- 過負荷時のTvjopは最大175°C
- PressFITピン
利点
- PressFITピン、高さ12mmのEasyファミリーを拡張
- ピン技術によるプラットフォームベース設計
- 高信頼性パッケージと生産コンセプト
- 低RDSによる最高レベルの電力密度
- 能動部品によるドリフトの低減
- 十分な過電圧マージンにより、DC1500 Vでのフル電流動作に対応
- 宇宙線による故障率の低減
- システムコストを低減し、最高のコストパフォーマンスを実現
Get familiar with the 2 kV CoolSiC™ MOSFET M1H - in this video, you will get an overview of the advantages of using it in both Easy and 62 mm packages.
Infineon’s Easy family’s tremendous growth in the past few years led Easy modules to become even more flexible and scalable in key areas, such as voltage class and topologies.
As a result, Easy modules are widely used, not only in industrial applications but also in automotive applications.
To continue the successful momentum created by Easy 3B, “the big brother of the family”, Infineon has successfully developed the Easy 4B package, extending the package’s capabilities even further!
The EasyPACK™ 4B is now the largest package in the Easy family, with three DCB substrates.
This training covers the properties of Silicon Carbide which change the way how an inverter is designed compared to Si-chips. With that in mind, we explain SiC specific degradation mechanisms and how to ensure that SiC devices survive in the application, considering these special failure modes, by applying the reliability tests Infineon developed. These are internally mandatory for SiC device qualifications to ensure better quality, safety, and reliable device performance for years.