DF17MR12W1M1HF_B68

概要

EasyPACK™ 1B CoolSiC™ MOSFET 1200 V, 17 mΩ booster single MPPT module with enhanced generation 1, NTC and PressFIT Contact Technology.

特長

  • Best-in-class packages with 12 mm height
  • Combination of leading edge WBG material and easy module packages
  • Very low module stray inductance
  • Wide RBSOA
  • 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology
  • Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
  • Extended maximum gate-source voltages of +23 V and -10 V
  • Tvjop under overload condition up to 175°C
  • PressFIT pins
  • Integrated NTC temperature sensor

利点

  • Outstanding module efficiency which enables system cost advantages
  • System efficiency improvement for reduced cooling requirements
  • Enabling higher frequency to Increase power density
  • Best cost performance ratio which leads to reduced system costs
図
ビデオ
PressFIT テクノロジー

パワーエレクトロニクスのお客様は、より高い温度や新しいアプリケーションに対応するため、高い信頼性を備えた最新の簡単な接合技術を必要としています。

トレーニング
CoolSiC™ M1H with Easy modules

This training covers the properties of Silicon Carbide which change the way how an inverter is designed compared to Si-chips. With that in mind, we explain SiC specific degradation mechanisms and how to ensure that SiC devices survive in the application, considering these special failure modes, by applying the reliability tests Infineon developed. These are internally mandatory for SiC device qualifications to ensure better quality, safety, and reliable device performance for years.

This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.

With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

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