CoolSiC™ Silicon Carbide MOSFET module technology in different packages and topologies
Power modules with CoolSiC™ MOSFET open up new opportunities for inverter designers to realize never before seen levels of efficiency and power density. In addition, Silicon Carbide (SiC) is tailoring to application needs by different available topologies from 45 mOhm to 2 mOhm RDS(on).
Available in different configurations such as 3-level, dual, fourpack, sixpack or as booster, our 1200V SiC MOSFET modules offer a superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses.
All EasyPACK™, EasyDUAL™ and 62mm CoolSiC™ MOSFET power modules can be ordered with pre-applied Thermal Interface Material (TIM).
Silicon Carbide (SiC) Forum
The SiC web forum provides you with a platform for exchanging ideas with the community, asking our Silicon Carbide experts for advice and for sharing your experience with CoolSiC™ MOSFET modules and discretes.
SiC MOSFET 650 V and 1200 V Gate Driver ICs
Ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easier handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as most suitable.