SiC（シリコンカーバイド）CoolSiC™ MOSFET
さまざまなパッケージとトポロジーを取り揃えたCoolSiC™ MOSFETモジュール技術
インフィニオンのCoolSiC™ MOSFETパワーモジュールのラインアップは、インバータ設計者にこれまでにないレベルの効率と電力密度を実現する新たな機会を提供します。炭化ケイ素 (SiC) 半導体をスイッチとして使用する場合、高温動作および高いスイッチング周波数での動作を実現すると同時に、システム全体の効率を向上させます。さらに、炭化ケイ素 (SiC) パワーモジュールは、さまざまなアプリケーションのニーズに合わせることができ、RDS(on)は45 mΩから2 mΩのまでのトポロジーが用意されています。
インフィニオンのCoolSiC™ MOSFETパワーモジュールは、3レベル、ハーフブリッジ、4パック、6パック、ブースターなど、さまざまな回路構成でご利用可能です。1200V SiC MOSFETモジュールは、最先端のトレンチ設計によって実現された優れたゲート酸化膜の信頼性、クラス最高レベルの導通損失およびスイッチング損失を提供します。
すべてのEasyPACK™、EasyDUAL™、62mm CoolSiC™ MOSFETパワーモジュールは、熱伝導材料 (TIM) をあらかじめ塗布した製品をご注文いただけるだけでなく、追加機能もご提供できます。たとえば、高性能窒化アルミニウム (AlN) セラミックを採用したEasyモジュールは、RthJHの熱性能を大幅に向上させます。
新世代のCoolSiC™ M1HファミリーからEasyPAC™および62mmモジュールを近日リリース予定
| M1 Product |
Last time buy date |
Configuration |
M1H Replacement Product Launching soon |
Available dates |
| F4-23MR12W1M1_B11 |
Sep 22 |
Fourpack |
F4-17MR12W1M1H_B76 |
Q4/2022 |
| FF11MR12W1M1_B70 |
Sep 22 |
Half-bridge |
FF8MR12W1M1H_B70 |
Q4/2022 |
| FF6MR12W2M1_B70 |
Sep 22 |
Half-bridge |
FF4MR12W2M1H_B70 |
Q4/2022 |
| FS45MR12W1M1_B11 |
Sep 22 |
Sixpack |
FS33MR12W1M1H_B11 |
Q4/2022 |
| DF11MR12W1M1P_B11 |
Sep 22 |
Booster |
DF8MR12W1M1HFP_B67 |
Q4/2022 |
| DF23MR12W1M1_B11 |
Sep 22 |
Booster |
DF17MR12W1M1HF_B67 |
Q4/2022 |
| F4-15MR12W2M1_B76 |
Sep 22 |
Fourpack |
F4-11MR12W2M1H_B76 |
Q1/2023 |
| FF23MR12W1M1P_B11 |
Sep 22 |
Half-bridge |
FF17MR12W1M1HP_B11 |
Q4/2022 |
| FF45MR12W1M1_B11 |
Sep 22 |
Half-bridge |
FF33MR12W1M1H_B11 |
Q4/2022 |
| FF8MR12W2M1P_B11 |
Sep 22 |
Half-bridge |
FF6MR12W2M1HP_B11 |
Q4/2022 |
| F4-11MR12W2M1_B76 |
Sep 22 |
Fourpack |
F4-8MR12W2M1H_B76 |
Q1/2023 |
| DF23MR12W1M1P_B11 |
Sep 22 |
Booster |
DF17MR12W1M1HFP_B67 |
Q4/2022 |
| FF23MR12W1M1_B11 |
Sep 22 |
Half-bridge |
FF17MR12W1M1H_B11 |
Q4/2022 |
| FF11MR12W1M1P_B11 |
Sep 22 |
Half-bridge |
FF8MR12W1M1HP_B11 |
Q1/2023 |
| FF8MR12W2M1_B11 |
Sep 22 |
Half-bridge |
FF6MR12W2M1H_B11 |
Q4/2022 |
| F3L11MR12W2M1_B65 |
Sep 22 |
3-Level |
F3L11MR12W2M1_B74 |
Q1/2023 |
| FF6MR12W2M1P_B11 |
Sep 22 |
Half-bridge |
FF4MR12W2M1HP_B11 |
Q4/2022 |
| FF11MR12W1M1_B11 |
Sep 22 |
Half-bridge |
FF8MR12W1M1H_B11 |
Q4/2022 |
| DF11MR12W1M1_B11 |
Sep 22 |
Booster |
DF8MR12W1M1HF_B67 |
Q4/2022 |
| F4-23MR12W1M1P_B11 |
Sep 22 |
Fourpack |
F4-17MR12W1M1HP_B76 |
Q1/2023 |
| FF6MR12W2M1P_B11 |
Sep 22 |
Half-bridge |
FF4MR12W2M1HP_B11 |
Q4/2022 |
| F4-45MR12W1M1_B76 |
Sep 22 |
Fourpack |
F4-33MR12W1M1H_B76 |
Q4/2022 |
| F4-23MR12W1M1_B76 |
Sep 22 |
Fourpack |
F4-17MR12W1M1H_B76 |
Q4/2022 |
| F3L15MR12W2M1_B69 |
Sep 22 |
3-Level |
F3L11MR12W2M1H_B19 |
Q1/2023 |
SiC MOSFET 1200VゲートドライバIC
CoolSiC™ MOSFETのような超高速スイッチングのパワートランジスタは、絶縁ゲート出力部を使うと取り扱いが容易です。その最適解としてインフィニオンのコアレストランス技術に基づくガルバニック絶縁EiceDRIVER™ ICを勧めします。
CoolSiC™ MOSFET Microlearnings
Understand why to use WBG switches for bi-directional converters, the topologies used and how they function.
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs, Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
- Distinguish the features and benefits of Infineon’s CoolSiC™ solutions in target applications and identify Infineon’s fully scalable CoolSiC™ portfolio to meet this automotive market transition
- Explain the reasons for the increasing introduction of silicon carbide technology in the automotive applications
Infineon offers trusted expertise in all 3 main power semiconductor technologies. Check out how to position them in AC-DC applications!
Click here to find out more.
