IMBF170R650M1

概要

CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package

CoolSiC™  1700 V, 650 mΩ SiC MOSFET  in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

特長

• Optimized for fly-back topologies
• Extremely low switching loss
• 12 V / 0 V gate-source voltage compatible with fly-back controllers
• Fully controllable dV/dt for EMI optimization
• SMD package with enhanced creepage and clearance distances, > 7 mm

利点

• 1700 V SiC MOSFET enables simple single-ended fly-back topology at high efficiency level for use in auxiliary power supplies
• SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink
• Reduced isolation effort due to extended creepage and clearance distances of package
• Reduced system complexity
• High power density

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