650 V Silicon Carbide MOSFETs
650 V CoolSiC™ MOSFETs Industrial grade with on-resistance ratings from 7 mΩ up to 260 mΩ
Infineon CoolSiC™ Silicon Carbide MOSFET 650 V discretes were especially developed for applications such as Server SMPS, ESS, Solar inverters, EV charging, UPS and other Industrial SMPS.
Technical information
Infineon's CoolSiC™ Silicon Carbide MOSFET 650 V discrete devices exeptional robustness to parasitic turn-on and mature gate oxide technology enables outstanding perfomance in hard-switching topologies like Totem Pole PFC, Vienna Rectifier and ANPC. Furthermore the substantial reduction in Output Capacitance (Coss) in G2 allows operation at higher switching frequency in soft switching topologies, such as CLLC, DAB and LLC. As a result, it is made possible to achieve power density up to 100W/in3 and overall efficieny of approximately 97.5% at full load for Server and AI PSU ranging from 3 kW to 12 kW, all while minimizing the bill of materials (BOM).
Details 650 V CoolSiC™ MOSFET
Artificial intelligence (AI) applications are fast-developing and require even higher power than other traditional data center applications. Infineon CoolSiC™, together with the CoolMOS™ high RDS
granularity and vast package offering provides additional degrees of freedom to meet the stringent requirment of AI Servers.
Check out infineon reference designs and evaluation board for efficient PSU design using CoolSIC™ 650 V Discrete MOSFETs:
Infineon innovative SMD packages in QDPAK, TOLT, TOLL and ThinTOLL
Besides TO247, CoolSiC™ 650 V MOSFET features top-side cooled (TSC) packages available in JEDEC registered QDPAK and TOLT. TSC enables the optimization of the thermal (ie. cooling stack) and electrical path (i.e. power loop inductance), while keeping a small form factor. Moreover TSC enable scalability and platform designs with automatic assembly and optimize cost. On the other hand, TOLL is suitable for PSU using a daughter card approach. ThinTOLL has the smallest form factor in the portfolio, which enables high power density design.
G2 improved FOMs by 30% - 50% compared to G1, taking a leop in performance and power density
G2 offers comprehensive portfolio with new package additions and the lowerst 7 mOhm. It has also further improves price/performance of CoolSIC™ MOSFETs.
Key features
- Leading trench technology with superior gate oxide reliability
- Best immunity against unwanted turn-on effects
- Avalanche capability
- Enlarged driving voltage range (-7 V to +23 V static) in G2
- .XT Interconnect package technology
This video highlights the benefits of CoolSiC™, as seen through the eyes of our customers. Featuring testimonials from alpitronic, Tritium, Lite-On, Siemens Mobility, and Fronius, we see how SiC is driving innovation in energy generation, storage, and consumption.
This video provides valuable insights into the advantages of WBG (SiC & GaN) technology and its potential impact on the future of renewable energy, especially solar and energy storage systems.
CoolSiC™ MOSFET Webinars
This training will introduce you to the gate oxide reliability of CoolSiC™ MOSFETs and how Infineon's design enables the effective screening of defects by opting for a trench MOSFET.
Additionally, you will understand how this decision has allowed Infineon to achieve high reliability that surpasses that of mature silicon technology without negatively impacting key performance parameters.
The switching performance in particular is influenced by the chip's inherent properties, the device's operating conditions and the external circuitry. Optimizing operating conditions and circuitry can significantly improve the device performance in an application.
Circuit designers benefit from SPICE compact models that they can use in computer simulation to understand, troubleshoot and optimize the static and dynamic device behavior of applications through virtual prototyping.
This training explains the characteristics and use cases of simulation models offered by Infineon for CoolSiC™ MOSFETs, what to use them for and how to use them effectively.
This training provides an insight about the system benefits of wide-bandgap devices, which will conquer market share in areas where power density, efficiency and/or battery range are decisive. The training focuses on two applications, mobile chargers and on-board chargers, and will talk about the challenges faced by the solutions today and how SiC and GaN provide next levels of performance.
Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.
CoolSiC™ MOSFET Microlearnings
Discover the benefits and challenges associated with connecting SiC power MOSFETs in parallel
By the end of this training, you will be familiar with CoolSiC™ MOSFET 1200 V M1H technology for Easy modules and with Infineon ever-expanding Easy module portfolio in the area of wide band gap material and know about the key features and benefits that are coming along with our latest M1H 1200 V series.
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs, Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
- Distinguish the features and benefits of Infineon’s CoolSiC™ solutions in target applications and identify Infineon’s fully scalable CoolSiC™ portfolio to meet this automotive market transition
- Explain the reasons for the increasing introduction of silicon carbide technology in the automotive applications
Infineon offers trusted expertise in all 3 main power semiconductor technologies. Check out how to position them in AC-DC applications!
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