IQFH86N06NM5

概要

OptiMOS™ 5 60 V power MOSFETs in compact, high performance PQFN 8x6 package with very-low RDS(on)

This 60 V normal-level power MOSFET comes in our latest innovative, compact clip-based PQFN 8x6 mm2 package enabling very high currents and power levels. The part offers current industry-best RDS(on) of 0.86 mΩ combined with outstanding thermal performance.

This enables higher system efficiency and power density for a large variety of end applications like battery-powered applications, battery management, low-voltage drives and SMPS.

特長

  • Cutting edge OptiMOS™ silicon technology
  • Outstanding FOMs
  • High chip/package ratio
  • Optimized lead-frame and Cu-Clip design
  • Internally connected Q1/Q2 MOSFETs
  • Compact and simplified layout design
  • Dual-side cooling

利点

  • Minimized conduction losses
  • High power capability
  • Superior device performance
  • Reduced voltage overshoot
  • Superior thermal performance
  • Re-use board for multiple power levels
  • Superior switching performance/EMI

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