IQE004NE1LM7CGSC

概要

OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down Center-Gate with dual-side cooling

IQE004NE1LM7CGSC is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in RDS(on) and FOMQg by ~30%, and ~40% for FOMQOSS when compared to OptiMOS™ 5 25 V. The Center-Gate footprint is optimized parallelization. The dual-side cooling feature boosts thermal management capabilities, pushing power density and efficiency to the next level in High Power SMPS applications.

特長

  • New 15 V trench power MOSFET technology
  • RDS(on) of 0.45 mOhm
  • Outstanding FOMQOSS/FOMQg
  • Ultra-low package parasitics
  • Center-Gate footprint
  • Dual-side cooling variant

利点

  • Top fit in high-ratio DC-DC conversion
  • Reduced conduction losses
  • High efficiency
  • Best switching performance
  • Center-Gate for ideal parallelization
  • Better thermal management

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