IPT020N13NM6
概要
OptiMOS™ 6 power MOSFET 135 V Normal Level in TOLL
This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In TOLL, OptiMOS™ 6 135 V achieves ~48% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS™ 5 150 V.
This results in lower conduction losses and increased output power. The low vgsth spread leads to improved dynamic current sharing, that enables you to reduce the number of MOSFETs and lowers the system costs.
特長
Compared to OptiMOS™ 5 150 V
- Up to 48% lower ON-state-resistance
- Up to 38% lower gate threshold voltage spread
- Up to 70% reduction of reverse recovery charge (Qrr)
利点
- System cost reduction
- Lower conduction losses and increased output power
- Less paralleling required
- Reduced VDS overshoot & switching losses
- Higher power density designs
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