IPB085N15NM6 OptiMOS™ 6 power MOSFET 150 V normal level in D²PAK 3-pin package

概要

IPB085N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy StrongIRFET™ and OptiMOS™ 3 150 V products.

OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.

特長

  • 20% lower FOMg than OptiMOS™ 5
  • Industry's lowest Qrr in 150 V
  • Improved diode softness vs OptiMOS™ 5
  • Tight Vgs(th) spread of +/-500 mV
  • High avalanche ruggedness
  • Max Tj of 175°C and MSL1

利点

  • Low conduction and switching losses
  • Stable operation with improved EMI
  • Better current sharing when paralleling
  • Enhanced robustness
  • Improved system reliability
サポート