IPD60R210PFD7S

概要

600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R210PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R210PFD7S in a TO-252 DPAK package features R_DS(on)of 210mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill-of-material (BOM) the customer.

This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch³.

特長

Very low FOM R_DS(on) x E_oss
Integrated robust fast body diode
Up to 2kV ESD protection
Wide range of R_DS(on)values
Excellent commutation ruggedness
Low EMI
Broad package portfolio

利点

Minimized switching losses
Power density improvement compared to latest CoolMOS™ charger technology
Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select the right parts for design fine-tuning

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