IPB65R110CFD7

概要

The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPB65R110CFD7 in a D²PAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

特長

Ultrafast body diode and very low Q_rr
650V breakdown voltage
Significantly reduced switching losses compared to competition
Lowest R_DS(on) dependency over temperature

利点

Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Outstanding light-load efficiency in industrial SMPS applications
Improved full-load efficiency in industrial SMPS applications
Price competitiveness compared to alternative offerings in the market

推奨アプリケーション例

Infineon package 650V CoolMOS™ CFD7 TO263 D2PAK

トレーニング

650 V CoolMOS™ CFD7 superjunction MOSFET – Extending the CFD7 family

Infineon training 650V CoolMOS™ CFD7 superjunction Power MOSFET fast body diode, LLC topology, ZVC topology, hard commutation ruggedness

Infineon’s 650V CoolMOS™ CFD7 is extending the voltage class offering of the CFD7 family and comes along with several features.

Watch eLearning

品質

サポート