45V～80V Nチャンネル パワーMOSFET

We offer many different product options that cover a large range of offerings:

• 60 V N-channel MOSFET
• OptiMOS™ 5 60 V N-channel MOSFET
• 60 V StrongIRFET™ N-channel MOSFET
• OptiMOS™ and IR MOSFET 60 V/80 V logic level 
• OptiMOS™ 5 80 V N-channel MOSFET 

With an extensive product portfolio of N-channel MOSFETS in the 45 V-80 V range, Infineon has your needs covered for both industrial and automotive applications. Find out more about our product options below.

60 V N-channel MOSFET

Infineon’s 60 V N-channel MOSFET range of products includes OptiMOS™ and StrongIRFET™ silicon die technology which address requirements for both low and high-switching frequencies. The 60 V MOSFET product family meets all power needs by offering both surface-mount and through-hole devices.

Additionally, Infineon offers a wide selection of powerful and space saving OptiMOS™ 50, 55 V and 60 V N-channel MOSFETs including Dual and single N-channel power MOSFETs in a SO-8 Package.

OptiMOS™ 5 60 V N-channel MOSFET

A common challenge that AC-DC designers face is in how to improve system efficiency and power density while reducing costs. Infineon’s OptiMOS™ 5 60 V portfolio features 15% lower drain source on resistance (R_{DS (on)}) and 31% lower figure of merit (R_DS(on) x Q_g) compared to alternative devices and offers a perfect solution to this problem.

In addition to the higher switching frequencies of the OptiMOS™ 5 60 V N-channel MOSFET, this family also offers higher efficiency and a significant reduction of the voltage overshoot which reduces the need for a snubber circuit and saves engineering effort and cost.

Since these products are optimized for synchronous rectification, they are ideal for switched mode power supplies (SMPS), as well as a broad range of industrial applications such as motor control, solar micro inverters, and fast switching DC-DC converters.

60 V StrongIRFET™ N-channel MOSFET

Designed for a wide variety of industrial applications, the StrongIRFET™ 60 V MOSFET portfolio offers ultra-low on-state resistance R_DS(on) and high current carrying capability and improves performance in low frequency applications. Each device in the product family is 100 percent avalanche tested at industry highest avalanche current levels to ensure the most robust solution for demanding industrial applications. The devices are available in through hole and surface mount packages.

OptiMOS™ 5 and IR MOSFET™ 60 V/80 V logic level

Infineon’s 60 V and 80 V logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter, and telecom applications thanks to the low gate charge (Q_g) reducing switching losses without compromising conduction losses. These improved figures of merit allow operations at high switching frequencies. The OptiMOS™ 5 and IR MOSFET™ logic level products are also available in 100 V voltage class.

OptiMOS™ 5 80 V N-channel MOSFET

As an industry leader, Infineon’s OptiMOS™ 5 80 V power MOSFETs portfolio of packages are designed for synchronous rectification in telecom and server power supply applications, as well as or solar, low voltage drives, and laptop adapters.

The OptiMOS™ 5 80 V MOSFET has a R_DS(on) reduction of up to 43% compared to the previous generation, and is also available in 100 V voltage class.

Infineon’s portfolio of 45 V-80 V N-channel MOSFETs are suitable for numerous applications including synchronous rectification, solar inverters, and battery powered applications.

45 V-80 V N-channel MOSFET for automotive applications

Infineon provides a large product portfolio of N-channel MOSFETS in the 12 V-40 V that are automotive qualified. To find out more, visit our automotive MOSFET page.