IAUZN04S7N049 60 A, 40 V Automotive Power MOSFET with OptiMOS™-7 Technology
概要
The IAUZN04S7N049 is a high-current, low-RDS(on) power MOSFET in a 3x3mm² advanced leadless package with Cu-Clip for low package Ron and min. stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications such as power distribution, body control modules, and electric motors.
特長
- 3x3 mm² small footprint
- 60 A high current capability
- Available in leading-edge OptiMOS-7™ 40V technology
- RDS(on) range: 1.2 mΩ – 4.9 mΩ
- Advanced leadless package for low Ron and inductance
- High avalanche capability and SOA ruggedness
利点
- Highest power and current density
- High thermal capacity lead-frame package
- Reduced conduction losses
- Optimized switching behavior
- Reduced form factor vs traditional packages
- JEDEC Industry standard package PG-TSDSON-8
推奨アプリケーション例
- Power Distribution
- all Body control modules
- Window-lift
- Power-lift gate
- Power-seat
- Electric Parking Brake
- High redundancy EPS
- Small BLDC drives
サポート