IAUTN15S6N038T 150V, N-Ch, 3.8 mΩ max, Automotive MOSFET, TOLT (10x15), OptiMOS™ 6

概要

IAUTN15S6N038T is built with Infineon’s leading-edge, power semiconductor technology OptiMOS™ 6 150V. It is offered in our versatile, robust, high current TOLT 10x15 mm² SMD package and designed for high performance, high quality and robustness needed for demanding automotive applications. Key characteristics include RoHS compliance, MSL1 rating, automotive quality beyond AEC-Q101, PPAP capability, and delivery in tape and reel format.

特長

  • Breakdown voltage of 150V
  • Low RDS(on) → lowest conduction losses
  • N-ch.-Enhancement mode-Normal Level
  • Tight distribution of VGS(th)
  • 175°C operating temperature
  • High avalanche capability

利点

  • High power density
  • By far industry’s lowest RDS(on)
  • High ID for high-power applications
  • High switching performance

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