IAUMN04S7N006G 200 A, 40 V, Automotive Power MOSFET with OptiMOS™-7 Technology
概要
Infineon's reliable and robust Automotive Power MOSFET: IAUMN04S7N006G is a high-performance, N-channel OptiMOS™ power MOSFET designed for demanding automotive applications. With an extended qualification beyond AEC-Q101, enhanced electrical testing, and a robust design, this device ensures reliable operation in harsh environments. It has an operating temperature range of -55 to 175°C, MSL2 up to 260°C peak reflow, and 100% avalanche testing, so it's ideal for general automotive applications.
特長
- Low RDS(on) in 8x8 mm2
- High Avalanche capability
- High SOA ruggedness
- Fast switching times (on/off)
- Leadless Packages w/ Cu-Clip
- Thin wafer Cu-technology
- 300 mm in-house production
- Gullwing package w/ long leads
利点
- High power density in 8x8
- Increased current capability
- Improved design ruggedness
- Good switching performance
- efficient cooling in 8x8m mm2
- Automotive quality package
- Automotive quality production
- High TCOB performance on IMS
推奨アプリケーション例
- Automotive BLDC drives
- Zonal architecture switches
- Battery disconnect
- Power distribution
サポート