600V CoolMOS™ P7
Perfect combination between high efficiency and ease-of-use
The 600V CoolMOS™ P7 superjunction (SJ) MOSFET family is a general purpose series, targeting a broad variety of applications, ranging from low power SMPS up to the highest power levels.
In the low power arena it is the successor of the 600V CoolMOS™ CE, and for high power SPMS applications it is the replacement for the 600V CoolMOS™ P6, which makes it the perfect choice for applications, such as server, telecom, PC, solar, lighting, adapters and TV. 600V CoolMOS™ P7 is Infineon’s most well balanced CoolMOS™ technology in terms of combining ease-of-use and excellent efficiency performance.
Compared to its predecessors, 600V CoolMOS™ P7 SJ MOSFETs offer highest efficiency and improved power density due to the significantly reduced QG and Eoss levels, as well as optimized RDS(on).
The carefully selected integrated gate resistors enable very low ringing tendency, and, due to its outstanding robustness of body diode against hard commutation, it is suitable for hard, as well as so switching topologies, like LLC.
In addition, the feature of an excellent ESD capabilty helps to improve the quality in manufacturing. The 600V CoolMOS™ P7 offers a wide range of RDS(on)/package combinations, including THD, as well as SMD devices, at an RDS(on) granularity from 24mΩ to 600mΩ and comes along with the most competitive price/performance ratio of all 600V CoolMOS™ offerings.
600V CoolMOS™ P7 achieves up to 1.5% better efficiency and 4.2°C lower MOSFET temperature versus competitor offerings. Its gate charge Q g and E oss are 30-60 percent lower compared to previous CoolMOS™ families and competition, which leads to reduced driving and switching losses that allow high efficiency in various power classes. Furthermore, the optimized R DS(on) enables smaller footprints and higher power density.
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