- Low Switching Losses
- Trench IGBT 3
- V(CEsat) with positive Temperature Coefficient
- Low V(CEsat)
- Al(2)O(3) Substrate with Low Thermal Resistance
- Compact Design
- PressFIT Contact Technology
- Rugged mounting due to integrated mounting clamps
- Compact module concept
- Optimized customer’s development cycle time and cost
- Configuration flexibility
Also available as variation with Soldering connection technology: FS35R12W1T4
Optimize your application with an EiceDRIVER™ Enhanced HV Gate Driver IC.
Find an answer to your question
Technical Assistance Center (TAC)
Infineon welcomes your comments and questions.
If you have any questions concerning our products, please fill out the following form. Your inquiry will be sent to the appropriate specialist who will be in touch with you as soon as possible.
You will receive a confirmation E-mail to validate your address in our system. Any attached file to the reply which will help to support your inquiry is highly appreciated.