FZ1200R45HL3 4500 V 1200 A シングルスイッチ IGBTモジュール

概要

IHV-B 4500 V, 1200 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and isolated AlSiC Base Plate - The best solution for your industry applications

特長

  • High DC Stability
  • High Short Circuit Capability, Self Limiting Short Circuit Current
  • High Dynamic Robustness
  • Low VCEsat with positive Temperature Coefficient
  • High Creepage and Clearance Distances

利点

  • High power density for compact inverter designs
  • Standardized housing
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