FF75R12RT4
概要
1200 V dual IGBT module
34 mm 1200 V, 75 A dual IGBT module with fast TRENCHSTOP™ IGBT4 and Emitter Controlled 4 Diode.
特長:
- Extended Operation Temperature Tvj op
- Low Switching Losses
- Low VCEsat
- Tvj op = 150°C
- VCEsat with positive Temperature Coefficient
- Isolated Base Plate
- Standard Housing
利点:
- Flexibility
- Optimal electrical performance
- Highest reliability
ターゲットアプリケーション:
Please select a matching HV Gate Driver IC from our EiceDRIVER™ Portfolio.
With Infineon EiceDRIVER™ Enhanced and Compact Driver ICs as well as EiceDRIVER™ Safe Driver Boards we provide a broad spectrum of solutions for reliable and efficient controls of IGBT Modules.
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