FF75R12RT4

概要

1200 V, 75 A dual IGBT module

34 mm 1200 V, 75 A dual IGBT module with fast TRENCHSTOP™ IGBT4 and Emitter Controlled 4 Diode.

特長

  • Extended Operation Temperature Tvj op
  • Low Switching Losses
  • Low VCEsat
  • Tvj op = 150°C
  • VCEsat with positive Temperature Coefficient
  • Isolated Base Plate
  • Standard Housing

利点

  • Flexibility
  • Optimal electrical performance
  • Highest reliability

推奨アプリケーション例

Please select a matching HV Gate Driver IC from our EiceDRIVER™ Portfolio.
With Infineon EiceDRIVER™ Enhanced and Compact Driver ICs as well as EiceDRIVER™ Safe Driver Boards we provide a broad spectrum of solutions for reliable and efficient controls of IGBT Modules.

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