IKD08N65ET6

概要

650 V, 8 A IGBT with anti-parallel diode in TO-252-3 package

Hard-switching 650 V, 8 A TRENCHSTOP™ IGBT6 discrete in TO-252-3 package. This price optimized range has premium controllability for a best cost efficient solution.

特長

  • Very low VCEsat
  • Maximum junction temperature 175 °C
  • Short circuit withstand time 3 µ at 400 V Vcc , TC = 150 ℃
  • Low gate charge QG
  • Pb-free lead plating; RoHS compliant

Trench and field-stop technology for 650 V applications offers :

  • very tight parameter distribution
  • high ruggedness, temperature stable behavior
  • low VCEsat and positive temperature coefficient
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