IKA06N60T

概要

600 V, 6 A IGBT Discrete with anti-parallel diode in TO-220 Full-Pak package

Hard-switching 600 V, 6 A TRENCHSTOP™ IGBT3 copacked with full-rated external free-wheeling diode in a TO220 Full-Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to the combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

特長

  • Very low VCEsat 1.5 V (typ.)
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • Very soft, fast recovery anti-parallel Emitter Controlled Diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

利点

  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability
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