IHW30N110R3

概要

1100 V IGBT with anti-parallel diode in TO-247 package

The 3rd generation of reverse conducting 1100 V, 30 A TRENCHSTOP™ RC-IGBT3 with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs.

特長

  • Best-in-class conduction properties in VCEsat and Vf
  • Lowest switching losses, highest efficiency
  • Excellent thermal behavior
  • Tj(max) = 175°C
  • Soft current turn-off waveforms for low EMI

利点

  • Lowest power dissipation
  • Better thermal management
  • Surge current capability for lower EMI filtering requirements
  • Reduced system costs
  • Highest reliability against peak currents

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