CoolSiC™ ハイブリッド デバイス
Silicon Carbide (SiC) diodes and transistors are key components for modern and innovative power electronic
Use of a SiC diode in combination with a silicon IGBT allows to extend the capabilities of the IGBT technology reaching the next level efficiency with hybrid power switch devices. The CoolSiC™ Hybrid products create the price-performance bridge between pure Si-solution and high performance of entirely SiC MOSFET designs.
- CoolSiC™ hybrid discretes: Fast plug & play upgrade of available discrete designs to a higher efficiency, as a rule of thumb – 0.1% efficiency increase for each 10kHz – i.e. 0.23% efficiency increase for working frequency of 23kHz.
- CoolSiC™ hybrid modules: Form the ideal bridge between purely Silicon-based and Silicon Carbide solutions. They combine IGBT chips with SiC diodes to further extend the capacity of the IGBT technology.
Ultra low switching losses comparable to SiC MOSFET
The CoolSiC™ hybrid device co-packed with SiC diode significantly reduces switching losses at almost unchanged dv/dt and di/dt values. Ultra fast IGBTs in Kelvin-emitter 4-pin packages enable reduction of switching losses at the expense of higher dv/dt or di/dt values (and thus worse EMC). Fast switching S5 TRENCHSTOP™ 5 650 V IGBT or ultra fast switching H5 TRENCHSTOP™ 5 IGBT co-packed with free- wheeling Gen6 SiC diode in TO-247- 4pin package. In addition to the discrete portfolio we offer our best-in-class 12mm height baseplate-less Easy modules in which we use our latest TRENCHSTOP™ technology S7 and H5 co-packed with a CoolSiC™ Schottky Diode.
|Significant reduction of switching losses. SiC MOS-like efficiency
|Junction temperature reduction
|Switching frequency increase
|Cost-effective and "safer" alternative to SiC MOSFETs
|Competitve BOM while keeping high system efficiency
|Plug-and-play replacement of existing IGBT solutions
|Efficiency improvement of around 0.1% for each 10 kHz switching frequency