FF06MR12A04MA2

概要

The power module implements the second generation CoolSiC™ Automotive MOSFET 1200 V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles

特長

  • VDSS = 1200 V
  • IDN = 190 A / IDRM = 380 A
  • Low inductive design ≤ 8 nH
  • Low RDS (on)
  • Low switching losses
  • Low Qg and Crss
  • New semiconductor material - silicon carbide
  • Tvj,op = 175°C

利点

  • 4.25 kV DC 1 second insulation
  • Compact design
  • High power density
  • AlN Substrate with low thermal resistance
  • Integrated NTC temperature sensor
  • RoHS compliant
  • UL 94 V0 module frame

The HybridPACK™ DSC CoolSiC™ G2 module is a compact B2-bridge power module (1200V/ 190A)

サポート