レベルシフト ゲートドライバIC Robust, easy-to-use level-shift gate driver ICs for MOSFETs or IGBTs

EiceDRIVER™ level-shift gate drivers provide full driver capability with fast switching speeds, designed-in ruggedness and low power dissipation. Gate driver based solutions can save up to 30% in part count reduction and up to 50% in board space compared to discrete optocoupler or transformer-based solutions.

Thanks to technology development at Infineon and International Rectifier, our selection of gate driver ICs range from simple, cost-effective solutions to full-featured, advanced ICs.

Infineon offers two level-shift gate driver IC technologies:

• Level-shift Silicon-on-insulator (SOI) technology enables a rugged, high-voltage monolithic IC design. SOI provides low-ohmic, integrated bootstrap-diodes, protection against negative transient voltage spikes, and eliminates parasitic transistors that cause latch-up.
• Level-shift Junction Isolation (JI) technology (link to Junction Isolation page) is our industry-proven, standard MOS/CMOS process. Our high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable monolithic construction with the best price for performance.

Infineon silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology for gate driver ICs with integrated bootstrap-diode (BSD) and industry-best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide eliminating parasitic bipolar transistors that can cause latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

Infineon offers three-phase and half-bridge gate driver ICs that can drive up to 8 A current and withstand voltages for each voltage class: <200 V, 600 V, 650 V, and 1200 V.

Learn more about Infineon silicon on insulator (SOI) technology

Pioneered by International Rectifier (IR) since 1989 with the introduction of the first monolithic product, the high-voltage integrated circuit (HVIC) technology uses patented and proprietary monolithic structures integrating bipolar, CMOS, and lateral DMOS devices with breakdown voltages above 700 V and 1400 V for operating offset voltages of 600 V and 1200 V.

Using this mixed-signal HVIC technology, both high-voltage level-shifting circuits and low-voltage analog and digital circuits can be implemented. With the ability to place high-voltage circuitry (in a 'well' formed by polysilicon rings) that can 'float' 600 V or 1200 V on the same silicon away from the rest of the low-voltage circuitry, high-side power MOSFETs, or IGBTs exist in many popular off-line circuit topologies such as buck, synchronous boost, half-bridge, full-bridge, and three-phase.

These HVIC gate drivers with floating switches are well-suited for topologies requiring high-side, half-bridge, and three-phase configurations.

Learn more about Infineon silicon on insulator (SOI) technology