IR2109

概要

600 V half-bridge gate driver IC with shutdown

600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC, and 14 Lead PDIP.

特長:

  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage
  • dV/dt immune
  • Gate drive supply range from 10 to 20 V
  • Undervoltage lockout for both channels
  • 3.3 V, 5 V, and 15 V logic input compatible
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • High side output in phase with IN input
  • Logic and power ground + /- 5 V offset
  • Internal 540ns dead-time
  • Lower di/dt gate driver for better noise immunity
  • Shut down input turns off both channels

ターゲットアプリケーション:

図
ソフトウエア&ツール
ビデオ
7:03

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.

2:41

Advantages of Infineon SOI Gate Driver Technology

1200 V Silicon-On-Insulators level-shift gate drivers from the market leader. This video demonstrates the advantages of products with Infineon SOI. E.g. Integrated bootstrap diode, Low level-shift losses - saving space and cost.

9:21

EiceDRIVER™ 2EDL Driver IC Family

EiceDRIVER™ 2EDL is a 600V half bridge gate driver IC family basing on level-shifter SOI (Silicon on Insulator) technology, which integrates low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications. 

トレーニング
58:35

Webinar: Every Switch needs a Driver - The right Driver makes a Difference

We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.

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