IR2106
概要
600 V high-side and low-side gate driver IC
600 V High and Low Side Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC, and 14 Lead PDIP.
For the newest version with our SOI technology we recommend 2ED2106S06F, providing integrated bootstrap diode, better robustness and higher switching frequency
特長
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20 V
- Undervoltage lockout
- 3.3 V, 5 V, and 15 V logic input compatible
- Matched propagation delay for both channels
- Logic and power ground + /- 5 V offset
- Lower di/dt gate driver for better noise immunity
- Outputs in phase with inputs
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