1EDI20I12AH
ガルバニック絶縁、短絡クランプ、独立したシンク/ソース出力を備えた耐圧1200VのシングルハイサイドゲートドライバIC
当製品はCT技術を採用した1200VハイサイドゲートドライバーICで、300milのワイドボディDSO-8パッケージにソース電流4.0A、シンク電流3.5Aを備えており、IGBTモジュール等にご使用頂けます。
より高い絶縁定格、大電流、伝搬遅延の短縮が求められる用途につきましては、インフィニオンが新たにリリースしたX3 Compactファミリー、1ED3120MU12Hをご覧ください。また、コストパフォーマンスに優れたパッケージサイズ150milのDSO-8もご用意しています：1EDI20I12AF
特長
- 1200 Vコアレス・トランス絶縁型ドライバIC
- 2 A レール・ツー・レール出力
- 沿面距離8mmの300ミルワイドボディパッケージ
- 独立したソース/シンク出力
Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers.
Learn more about the transformer driver ICs
Curious to learn more about how to make your gate driver designs simpler? Join us in this training where we will show you what to consider when selecting the gate driver for your application, go through the drive circuit step by step design, provide an outline of design considerations, while also taking the schematic and layout aspects into consideration!
- EiceDRIVER™ 1ED Compact now including X3 Compact family (1ED31xx), with up to 14 A output current, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
