1EDC20I12MH
UL認定のガルバニック絶縁、アクティブミラークランプ、独立したシンク/ソース出力を備えた耐圧1200VのシングルハイサイドゲートドライバIC
EiceDRIVER™ 1200Vハイサイド ゲートドライバーICは、DSO-8パッケージで提供され、ソース電流4.4Aにシンク電流4.1A、UL認証のガルバニック絶縁、アクティブ ミラー クランプ、IGBTモジュール用の短絡クランプを備えています。絶縁試験はUL 1577に従い、VISO = 3000 Vを1秒間加えて行っています。
より高い絶縁定格、大電流、伝搬遅延の短縮のためには、X3 Compactファミリーの 1ED3120MU12Hをご利用ください。また、価格性能比に優れたDSO-8の150 milのナローボディバージョンもあります: 1EDI10I12MF
特長
- 絶縁試験はUL 1577に従い、VISO = 3000 Vを1秒間加えて行っています。
- 1200 Vコアレストランス絶縁型ドライバーIC
- 2 Aののレール ツー レール出力
- 沿面距離8 mmの300 milワイドボディパッケージ
- アクティブミラークランプ
Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers.
Learn more about the transformer driver ICs
Curious to learn more about how to make your gate driver designs simpler? Join us in this training where we will show you what to consider when selecting the gate driver for your application, go through the drive circuit step by step design, provide an outline of design considerations, while also taking the schematic and layout aspects into consideration!
- EiceDRIVER™ 1ED Compact now including X3 Compact family (1ED31xx), with up to 14 A output current, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
