1ED3461MC12M
6 A, 5.7 kV single-channel flexible isolated gate driver with active Miller clamp, adjustable DESAT and Soft-off. UL 1577 & VDE 0884-11 certified
EiceDRIVER™ Enhanced single-channel highly flexible isolated gate driver with ±6 A typical sinking and sourcing peak output current in small space-saving DSO-16 fine pitch wide-body package with large creepage distance (>8 mm) for IGBTs, MOSFETs and SiC MOSFETs.
1ED3461MC12M belongs to the EiceDRIVER™ Enhanced 1ED34xx family (X3 Analog family) – single-channel isolated gate driver with adjustable DESAT and soft-off. Suitable for IGBTs, MOSFETs and SiC MOSFETs. 1ED3461 offers high configurability with DESAT (adjustable filter time), and soft-off (adjustable current level), through external resistor from input side (ADJA and ADJB pin). The driver IC also offers separate output, active Miller clamp, Fault, and over temperature shutdown.
I2C経由でアクセス可能な27のコンフィギュレーション レジスタを備えた1ED3860* (X3 Digital) バージョンも提供しています。
特長
- Flexible EiceDRIVER™ Enhanced single channel isolated gate driver 1ED34xx family (X3 Analog family)
- For use with 650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
- 2300 V functional offset voltage capable for selected applications
- ±6 A typical sinking and sourcing peak output current
- 40 V absolute maximum output supply voltage
- Separate source and sink outputs
- Active Miller clamp
- Precise VCEsat detection (DESAT) with fault output
- IGBT soft turn-off after desaturation detection
- Parameter adjustment from input side:
- Adjustable DESAT filter time with ADJB pin
- Adjustable soft-off current level with ADJA pin
- FLT and RDY status signaling to µController
- 11 V/12 V undervoltage lockout (UVLO) protection with hysteresis
利点
- Over-temperature shut down at 160 °C (±10 °C)
- Tight IC-to-IC propagation delay matching (30 ns max.)
- High common-mode transient immunity CMTI >200 kV/μs
- Suitable for operation at high ambient temperature up to 125 °C
- Small space-saving DSO-16 fine pitch wide-body package with large creepage distance (>8 mm)
- UL 1577 VISO = 6.84 kV (rms) for 1 s, 5.7 kV (rms) for 1 min
- IEC 60747-17/VDE 0884-11 with VIORM = 1767 V (peak, reinforced)
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少ない外付け部品とソフトオフ付きのDESATにより、高速な設計サイクルとクラス最高のDESAT精度を可能にします。
- The precise threshold and timings, combined with UL 1577 and IEC 60747-17/VDE 0884-11 certifications enable superior application safety
- Perfect fit for all applications requiring a reliable DESAT protection, benefiting from an active Miller clamp and preferring small PCB space requirements
Part No | Typ. Current | Feature | Isolation Certification |
1ED3431MC12M | ±3 A |
Miller clamp, Resistor adjustable DESAT and soft-off |
UL 1577 & VDE-11 |
±3 A | UL 1577 | ||
1ED3461MC12M | ±6 A |
Clamp driver, Resistor adjustable DESAT and soft-off |
UL 1577 & VDE-11 |
±6 A |
UL 1577 | ||
1ED3491MC12M | ±9 A |
UL 1577 & VDE-11 | |
1ED3491MU12M | ±9 A | UL 1577 |
![](/export/sites/default/media/eLearning/Industrial/gate_drivers/EiceDRIVER-1ED34x1Mc12M-E2/Eicedriver-1ED34.jpg_1779873395.jpg)
- The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
![](/export/sites/default/media/eLearning/Industrial/gate_drivers/EiceDRIVER-Enhanced-1ED38x0MC12M-digital-gate-driver-/1ED38x0MC12M.jpg_1780796916.jpg)
- The new EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
シリコンカーバイド(SiC)MOSFETは、パワーエレクトロニクスにあらゆる可能性を提供します。しかし、適切なゲートドライバを備えたSiC MOSFETを使用し、システムの利点を十分に活かすには、どうすれば良いでしょうか。本トレーニングでは、次のことが学べます:お客様のSiC MOSFET用に基準ゲート抵抗値を算出する方法。ピーク電流と消費電力の要件をもとに最適なゲートドライバICを選択する方法。最悪の条件下を想定し、実験室の環境でゲート抵抗値を微調整する方法。