1ED3124MU12F
14 A, 3 kV (rms) single-channel isolated gate driver with separate output, UL 1577 certified, 10.5 V UVLO
EiceDRIVER™ Compact single-channel isolated gate driver with 14 A typical sinking and sourcing peak output current in DSO-8 narrow-body package for IGBTs, MOSFETs and SiC MOSFETs.
1ED3124MU12F belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 Compact family). 1ED3124 offers separate sink and source output, accurate and stable timing, active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar.
特長
- EiceDRIVER™ Compact single channel isolated gate driver 1ED31xx family (X3 Compact family)
- For use with 650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
- 2300 V functional offset voltage capable for selected applications
- Galvanically isolated coreless transformer gate driver
- 14 A typical sinking and sourcing peak output current
- 40 V absolute maximum output supply voltage
- 90 ns propagation delay with 30 ns input filter
- High common-mode transient immunity CMTI >200 kV/μs
- Separate source and sink outputs
- Short-circuit clamping and active shutdown
- DSO-8 150 mil narrow-body package
- 10.5 V/12.5 V undervoltage lockout (UVLO) protection with hysteresis
利点
- Integrated filters reduce the need of external filters
- Tight IC-to-IC turn on propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature
- Suitable for operation at high ambient temperature and in fast switching applications
- UL 1577 VISO = 3.6 kV (rms) for 1 s, 3.0 kV (rms) for 1 min
- Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion
- The precise threshold and timings, combined with UL 1577 certification enable superior application safety
Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers.
Learn more about the transformer driver ICs
EiceDRIVER™ Compact 1ED31xx ファミリー (X3コンパクトファミリー) 製品を検索
| 品番 | 電流 (typ.) | 特長 | UVLO | 絶縁証明 |
| 14 A | セパレート出力 | 10.5/12.5 V |
UL 1577 |
|
| 10 A | アクティブミラークランプ |
10.5/12.5 V |
UL 1577 |
|
| 10 A | アクティブミラークランプ | 12/14.2 V |
UL 1577 |
|
| 6.5 A | セパレート出力 | 8.6/9.3 V |
UL 1577 |
|
| 6.5 A | セパレート出力 | 11.1/12 V |
UL 1577 |
|
| 6.5 A | セパレート出力 | 12.6/13.6 V |
UL 1577 |
- The EiceDRIVER™ X3 Compact family (1ED31xx), with up to 14 A output current, 2300 V functional isolation, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
- EiceDRIVER™ 1ED Compact including 1ED-X3 compact family (1ED31xx), with up to 14 A output current, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET. VDE 0884-11 & UL 1577 (planned). For solar, EV charging, industrial drive, UPS, SMPS.
シリコンカーバイド(SiC)MOSFETは、パワーエレクトロニクスにあらゆる可能性を提供します。しかし、適切なゲートドライバを備えたSiC MOSFETを使用し、システムの利点を十分に活かすには、どうすれば良いでしょうか。本トレーニングでは、次のことが学べます：お客様のSiC MOSFET用に基準ゲート抵抗値を算出する方法。ピーク電流と消費電力の要件をもとに最適なゲートドライバICを選択する方法。最悪の条件下を想定し、実験室の環境でゲート抵抗値を微調整する方法。
