1ED2147S65F 650 V high-side gate driver IC with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD)
概要
EiceDRIVER™ 650 V high side single channel gate driver IC with a typical 4 A source and 4 A sink current in DSO-8 package for IGBTs, MOSFETs and SiC MOSFETs.
特長
- Infineon thin-film-SOI-technology
- Maximum blocking voltage +650 V
- Output source/sink current +4 A/ -4 A
- Maximum supply voltage of 25 V
- Integrated Bootstrap Diode
- Negative VS transient immunity of 100 V
- Over current & under voltage protection
- Multi-function RFE pin functionality
- Less than 100 ns propagation delay
- DSO-8 package
- RoHS compliant
利点
- Excellent ruggedness and noise immunity
- High current output stage
- Power switch protection integrated
- Fault feedback provided
図
トレーニング
This training introduces the 1ED2127 driver family, highlighting its key features and benefits for high-performance power electronic applications. You will learn how to apply the driver in various applications and understand the advanced features of the second-generation Infineon SOI technology. The training covers the driver's features, applications, and evaluation board, providing a comprehensive understanding of the 1ED2127 driver family.
サポート
