1ED020I12-BT

概要

1200 V single high-side isolated gate driver IC with UL certification, active Miller clamp, DESAT, short circuit clamping, and two level turn off

1ED020I12-BT is a galvanic isolated single channel gate driver in DSO-16 wide body package that provides an output current capability of typically 2 A. All logic pins are 5V CMOS compatible and could be directly connected to a microcontroller. The data transfer across galvanic isolation is realized by the integrated Coreless Transformer Technology. The 1ED-BT provides several protection features like IGBT desaturation protection, active Miller clamping, active shut down and two level turn off.

特長

  • Single channel isolated gate driver IC (1ED-BT)
  • For 600 V/1200 V IGBTs, MOSFETs, SiC MOSFETs, discrete and modules
  • 2 A rail-to-rail typical output current
  • Precise DESAT protection, V(cesat) detection
  • Active Miller Clamp, two level turn off (TLTOff)
  • Active shutdown and Short circuit clamping
  • 28 V absolute Max. output supply voltage
  • 200/230 ns Max. propagation delay
  • 12/11 V output UVLO
  • ≥ 50 kV/µs CMTI
  • Certified according to UL 1577 with VISO = 3750 V for 1 min
  • Basic Isolation tested according VDE 0884-10 VIORM=1420 V, VIOTM=6000 V (standard expired Dec. 31, 2019, product and testing remain unchanged)

利点

  • Tight propagation-delay matching: tolerance improves application robustness without variations due to aging, current, and temperature
  • Precise, integrated filters reduce propagation-delay variation over a wide range of operating conditions; reduce the need of external filters
  • Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion
  • Wide body package with 8 mm creepage distance
  • Immunity against negative and positive transients, increases reliability of the end product
  • Low power losses for switching frequencies into MHz range

推奨アプリケーション例

 

Please also find our specially designed Evaluation Boards (EVAL-1ED020I12-BT) for 1ED020I12-BT Gate Driver ICs (EiceDRIVER™ Enhanced)

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トレーニング
IGBTディスクリートおよびモジュール向けゲートドライバの選択法

このトレーニングでは、IGBTアプリケーション向けゲート抵抗値の算出法、ピーク電流と電力損失要件に適したゲートドライバICの識別法、最悪条件の試験環境下でのゲート抵抗値の微調整法を学びます。

  • EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
  • The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

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SiC（シリコンカーバイド）MOSFETは、パワーエレクトロニクス分野に多くの可能性をもたらします。しかし、適切なゲートドライバを備えたSiC MOSFETを使用してシステムの利点を十分に活かすには、どうすれば良いのでしょうか。このトレーニングでは、お客様のSiC MOSFETの基準ゲート抵抗値を計算する方法、ピーク電流および電力損失の要件にもとづき最適なゲートドライバICを特定する方法、最悪の条件を想定し、実験室環境でゲート抵抗値を微調整する方法が学べます。

1ED34xx: 1-ch isolated driver with adj. DESAT
  • The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
  • Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc

視聴はこちら             

  • The new EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
  • Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

Watch now

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