IGLD60R190D1S

概要

600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability

The IGLD60R190D1S enables more compact topologies at higher efficiency and higher frequency operation.

It is certified through an extensive GaN-specific qualification process, exceeding industry standards.

Housed in the bottom-side cooled LSON-8 (DFN 8x8) package, it enables ideal power disspation as required in contemporary USB-C adapters and chargers.

特長

  • E-mode HEMT – normally OFF 
  • Ultra fast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • Consumer-grade qualification
  • Bottom-side cooled

利点

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

推奨アプリケーション例

  • Low power SMPS
  • Charger/adapters
  • Consumer SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC).
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