IGD70R200D2S

概要

The IGD70R200D2S GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in the DPAK package, it is well-suited for consumer applications with slim form factors.

特長

  • 700 V e-mode power transistor
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • Low dynamic RDS(on)
  • High ESD robustness: 2 kV HBM - 1 kV CDM
  • JEDEC qualified (JESD47, JESD22)

利点

  • Supports high operating frequency
  • Enables highest system efficiency
  • Enables ultrahigh power density designs
  • Supports BOM cost savings
サポート